Defect State Analysis in Ion‐Irradiated Amorphous‐Silicon Heterojunctions by HAXPES
Résumé
The efficiency in HIT (Heterojunction with Intrinsic Thin film) solar cells strongly depends on the passivation of dangling bonds at the a-Si:H/c-Si interface by hydrogen, introduced in the plasma enhanced CVD process. Here in, we study controlled defects that are introduced by Ar ion irradiation. We observe by hard X-ray photoemission spectroscopy (HAXPES) that during Ar ion implantation, Si-H bonds in the a-Si:H layer are broken and become dangling bonds. We quantify the number of dangling bonds in the a-Si:H layer, and we identify the electronic states associated to them, which explains previously observed photoluminescence transitions.
Origine : Fichiers produits par l'(les) auteur(s)
Loading...